SK Hynix Unveils Next-Generation Memory Roadmap to Address AI Bottlenecks (www.koreaittimes.com)

SK hynix has unveiled its next-generation memory roadmap aimed at tackling the increasing bottlenecks in AI infrastructure during a keynote address at SEDEX 2026. The company plans to enhance its leadership in high-bandwidth memory (HBM) and develop innovative solutions such as 3D Stacked DRAM and High Bandwidth Flash (HBF). These advancements are crucial as demand for AI inference grows rapidly, with SK hynix projecting a potential 20-fold increase in AI infrastructure performance requirements by 2030. The company emphasizes a holistic optimization of memory hierarchies to overcome constraints related to data transfer latency and energy costs, which are becoming critical in the AI landscape. Among the key innovations, HBF stands out as a new tier that bridges the gap between HBM and traditional DRAM, offering high bandwidth with significantly greater storage capacity. Furthermore, the development of 3D Stacked DRAM aims to enhance efficiency by reducing the physical distance between memory and processing units. By pursuing technologies like Compute Express Link (CXL) and emphasizing early standardization of HBF, SK hynix is committed to creating a more integrated memory architecture that caters to the diverse workloads of AI applications. Through its extensive exhibition and new roadmap, the company positions itself to meet the escalating demands of the AI era with cutting-edge memory solutions.