SoftBank, Intel to develop ZAM memory – new memory designed as lower-power HBM (www.tomshardware.com)

SoftBank's subsidiary SAIMEMORY, in collaboration with Intel, has secured funding from Japan's New Energy and Industrial Technology Development Organization (NEDO) to develop ZAM memory technology, a next-generation, low-power alternative to high-bandwidth memory (HBM). ZAM, designed to enhance AI data center performance, utilizes a vertical architecture with innovative wireless interconnects between memory layers. This approach aims to increase effective density, boost bandwidth, and reduce power consumption by approximately 40%, responding to the escalating demand for efficient memory systems as AI workloads grow exponentially. The significance of this development lies not just in its potential to reshape memory architecture but also in the broader implications for Japan's semiconductor industry. As the country aims to re-establish its presence in a market increasingly dominated by Taiwanese and South Korean manufacturers, the NEDO-backed program could play a pivotal role in enhancing global competitiveness. While ZAM is still in the prototype stage, with plans for mass production around 2029, its successful implementation could alleviate supply constraints and offer substantial cost savings in AI infrastructure, making it a crucial player in the future of AI memory solutions.